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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2016

Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction

You Wang
Lirida Naviner
Yue Zhang
  • Fonction : Auteur
Zhao Xiaoxuan
  • Fonction : Auteur
Erya Deng
  • Fonction : Auteur
Jacques-Olivier Klein
  • Fonction : Auteur
  • PersonId : 831562
Weisheng Zhao
  • Fonction : Auteur

Résumé

Spin-transfer torque magnetic tunnel junction (MTJ) is a promising candidate for nonvolatile memories thanks to its high speed, low power, infinite endurance, and easy integration with CMOS circuits. However, a relatively high current flowing through an MTJ is always required by most of the switching mechanisms, which results in a high electric field in the MTJ and a significant self-heating effect. This may lead to the dielectric breakdown of the ultrathin (~1 nm) oxide barrier in the MTJ and cause functional errors of hybrid CMOS/MTJ circuits. This paper analyzes the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier and proposes an SPICE-compact model of the MTJ. The simulation results show great consistency with the experimental measurements. This model can be used to execute a more realistic design according to the constraints obtained from simulation. The users can estimate the lifetime, the operation voltage margin, and the failure probability caused by TDDB in the MTJ-based circuits.
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Dates et versions

hal-01318736 , version 1 (19-05-2016)

Identifiants

Citer

You Wang, Hao Cai, Lirida Naviner, Yue Zhang, Zhao Xiaoxuan, et al.. Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction. IEEE Transactions on Electron Devices, 2016, 63 (4), pp.1762 - 1767. ⟨10.1109/TED.2016.2533438⟩. ⟨hal-01318736⟩
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