Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice

Abstract :

Voltage bistability is demonstrated at low temperature in a biased unipolar GaAs/AlGaAs superlattice, using a design based on tunneling from a charge reservoir into a Wannier-Stark ladder and competition between nearest and next-nearest neighbor coherent injection channels. The static conduction characteristics are accounted for by a density matrix approach of coherent injection in an inhomogeneous three-level system with resistive load. Electrostatic retroaction on the energy levels is shown to provide an adequate nonlinear feedback mechanism for bistability, as well as for other instability regimes including sustained Bloch oscillation above a retroaction threshold.

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https://hal.telecom-paristech.fr/hal-02286970
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Submitted on : Friday, September 13, 2019 - 4:25:35 PM
Last modification on : Sunday, September 15, 2019 - 1:12:49 AM

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Christophe Minot, Vishal Jagtap, Elisabeth Galopin, Jean-Christophe Harmand, Sylvain Barbay, et al.. Voltage bistability of coherent electron injection and nonlinear dynamics of a Bloch oscillation in a semiconductor superlattice. Physical Review B, 2015, 91 (24), pp.245308 11. ⟨10.1103/PhysRevB.91.245308⟩. ⟨hal-02286970⟩

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