Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor

Abstract : This work reports on the ultra-low linewidth enhancement factor (αH-factor) of semiconductor quantum dot lasers epitaxially grown on silicon. Owing to the low density of threading dislocations and resultant high gain, an αH value of 0.13 that is rather independent of the temperature range (288 K–308 K) is measured. Above the laser threshold, the linewidth enhancement factor does not increase extensively with the bias current which is very promising for the realization of future integrated circuits including high performance laser sources.
Document type :
Journal articles
Complete list of metadatas

Cited literature [25 references]  Display  Hide  Download

https://hal.telecom-paristech.fr/hal-02305802
Contributor : Jianan Duan <>
Submitted on : Friday, October 4, 2019 - 3:22:43 PM
Last modification on : Thursday, October 17, 2019 - 12:36:55 PM

File

J. Duan_APL2018(Alpha).pdf
Publisher files allowed on an open archive

Identifiers

Citation

J. Duan, H. Huang, D. Jung, Z. Zhang, J. Norman, et al.. Semiconductor quantum dot lasers epitaxially grown on silicon with low linewidth enhancement factor. Applied Physics Letters, American Institute of Physics, 2018, 112 (25), pp.251111. ⟨10.1063/1.5025879⟩. ⟨hal-02305802⟩

Share

Metrics

Record views

13

Files downloads

17