1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon

Abstract : This letter reports on a 1.3-µm reflection insensitive transmission with a quantum dot laser directly grown on silicon in the presence of strong optical feedback. These results show a penalty-free transmission at 10 GHz under external modulation with −7.4-dB optical feedback. The feedback insensitivity results from the low linewidth enhancement factor, the high damping, the absence of off-resonance emission states, and the shorter carrier lifetime. This letter paves the way for future on chip high-speed integrated circuits operating without optical isolators.
Document type :
Journal articles
Complete list of metadatas

Cited literature [18 references]  Display  Hide  Download

https://hal.telecom-paristech.fr/hal-02307202
Contributor : Jianan Duan <>
Submitted on : Wednesday, October 30, 2019 - 8:54:56 PM
Last modification on : Friday, November 8, 2019 - 1:34:53 AM

Identifiers

Collections

Citation

Jianan Duan, Heming Huang, Bozhang Dong, Daehwan Jung, Justin Norman, et al.. 1.3-μm Reflection Insensitive InAs/GaAs Quantum Dot Lasers Directly Grown on Silicon. IEEE Photonics Technology Letters, Institute of Electrical and Electronics Engineers, 2019, 31 (5), pp.345-348. ⟨10.1109/LPT.2019.2895049⟩. ⟨hal-02307202⟩

Share

Metrics

Record views

2