Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers

Abstract : This work shows that p-doped quantum dot lasers grown on silicon exhibit a low linewidth enhancement factor and hence a high resistance against optical feedback which are promising for isolator-free transmissions in photonic integrated circuits.
Document type :
Conference papers
Complete list of metadatas

Cited literature [5 references]  Display  Hide  Download

https://hal.telecom-paristech.fr/hal-02307227
Contributor : Jianan Duan <>
Submitted on : Monday, October 7, 2019 - 2:03:48 PM
Last modification on : Wednesday, October 9, 2019 - 1:35:11 AM

File

J. Duan_IPC2018.pdf
Files produced by the author(s)

Identifiers

Collections

Citation

J. Duan, H. Huang, D. Jung, J. Norman, J. Bowers, et al.. Low linewidth enhancement factor and high optical feedback resistance of p-doped silicon based quantum dot lasers. 2018 IEEE Photonics Conference (IPC), Sep 2018, Reston, United States. pp.1-2, ⟨10.1109/IPCon.2018.8527184⟩. ⟨hal-02307227⟩

Share

Metrics

Record views

5

Files downloads

4