First Results on 1.2 kV SiC MOSFET Body Diode Robustness Tests
Résumé
The paper propose a methodology study to analyze the body diode robustness of SiC MOSFETs. Different manufacturers, are used to validate the analysis. Two types of stresses have been applied: a continuous conduction test, (BDCT) or a pulsed conduction test, the classical half-sine surge current test applied to body diodes, BDSCT. BDCT applied current must be limited to avoid destruction related to the packaging but BDSCT enable to analyze both assembly degradation and bipolar degradation.
Domaines
Energie électrique
Origine : Fichiers produits par l'(les) auteur(s)